STH245N75F3-6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low profile, very low parasitic inductance

STH245N75F3-6
Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A
STripFET™ F3 Power MOSFET in a H²PAK-6 package
Datasheet - production data
Features
TAB
7
1
H²PAK-6
Figure 1. Internal schematic diagram
Order code
STH245N75F3-6
V_DS
75 V
R_DS(on) max. I_D
3.0 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Order code
STH245N75F3-6
Table 1. Device summary
Marking
Packages
245N75F3
H²PAK-6
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID026268 Rev 2
1/16
www.st.com