STH240N75F3-2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Conduction losses reduced

STH240N75F3-2, STH240N75F3-6
N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ III Power MOSFET
in H²PAK-2 and H²PAK-6 packages
Datasheet − production data
Features
Order code
STH240N75F3-2
STH240N75F3-6
V_DSS
75 V
R_DS(on)
max.
I_D
< 3.0 mΩ 180 A
■ Conduction losses reduced
■ Low profile, very low parasitic inductance
Applications
■ Switching application
Description
These devices are N-channel enhancement mode
Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
TAB
H²PAK-2
7
1
H²PAK-6
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1. Device summary
Order code
STH240N75F3-2
STH240N75F3-6
Marking
240N75F3
S(2, 3)
H2PAK-2
Package
H²PAK-2
H²PAK-6
S(2, 3, 4, 5, 6, 7)
H2PAK-6
AM14551V1
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 18486 Rev 2
1/18
www.st.com
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