STH240N10F7-2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Ultra low on-resistance

STH240N10F7-2,
STH240N10F7-6
N-channel 100 V, 0.002 Ω typ., 180 A STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
TAB
2
3
1
H²PAK-2
TAB
7
1
H²PAK-6
Features
Order codes
STH240N10F7-2
STH240N10F7-6
V_DS R_DS(on)max.
I_D
100 V 0.0025 Ω 180 A
• Ultra low on-resistance
• 100% avalanche tested
Applications
• High current switching applications
Figure 1. Internal schematic diagram
Description
These N-channel Power MOSFETs utilize the
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order codes
STH240N10F7-2
STH240N10F7-6
Table 1. Device summary
Marking
Package
240N10F7
H²PAK-2
H²PAK-6
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID026115 Rev 2
1/17
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