STH210N75F6-2 Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STH210N75F6-2
N-channel 75 V, 2.7 mΩ typ., 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-2 package
Datasheet — production data
Features
Order code
STH210N75F6-2
V_DSS
75 V
R_DS(on) max
I_D
< 3.4 mΩ 180 A
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
TAB
2
3
1
H²PAK-2
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order code
STH210N75F6-2
Marking
210N75F6
Package
H²PAK-2
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 018693 Rev 2
1/16
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