STH180N10F3-6 Datasheet, PDF (1/15 Pages) STMicroelectronics – Switching applications

STH180N10F3-6
N-channel 100 V, 3.9 mΩ typ.,180 A, STripFET™ F3
Power MOSFET in H²PAK-6 package
Datasheet - production data
Features
TAB
ct(s) 7
u ₁
rod _H2PAK-6
lete ^{P Figure 1: Internal schematic diagram}
Obsolete ^{Product(s) - Obso S(2,3,4,5,6,7)}
Order code
STH180N10F3-6
VDS
100 V
RDS(on)
max.
4.5 mΩ
ID
180 A
 Low on-resistence R_DS(on)
 100% avalanche tested
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Table 1: Device summary
Order code
Marking Package Packing
STH180N10F3-6
180N10F3
H²PAK-6
Tape
and reel
November 2014
DocID022347 Rev 4
This is information on a product in full production.
1/15
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