STH180N10F3-2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET

STH180N10F3-2
N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2
STripFET™III Power MOSFET
Features
Order codes
V_DSS
STH180N10F3-2 100 V
■ Ultra low on-resistance
■ 100% avalanche tested
R_DS(on)
max.
4.5 mΩ
I_D
180 A
Applications
■ High current switching applications
Description
This device is an N-channel enhancement mode
Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
TAB
2
3
1
H²PAK-2
Figure 1. Internal schematic diagram
D(TAB)
G(1)
Table 1. Device summary
Order codes
STH180N10F3-2
Marking
180N10F3
S(2, 3)
SC06140_H2PAK-2
Package
H²PAK-2
Packaging
Tape and reel
July 2011
Doc ID 019060 Rev 1
1/15
www.st.com
15