STH175N4F6-2AG Datasheet, PDF (1/18 Pages) STMicroelectronics – Very low on-resistance

STH175N4F6-2AG,
STH175N4F6-6AG
Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™
F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Features
TAB
2
3
1
H²PAK-2
TAB
7
1
H²PAK-6
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
Order codes
STH175N4F6-2AG
STH175N4F6-6AG
V_DS
40 V
R_DS(on) max I_D
2.4 mΩ 120 A
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
G(1)
S(2, 3)
H2PAK-2
G(1)
S(2, 3, 4, 5, 6, 7)
H2PAK-6
AM14551V1
Description
These devices are N-channel Power MOSFETs
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFETs exhibit very low R_DS(on) in all
packages.
Order codes
STH175N4F6-2AG
STH175N4F6-6AG
Table 1. Device summary
Marking
Package
175N4F6
H²PAK-2
H²PAK-6
February 2015
This is information on a product in full production.
DocID027534 Rev 1
Packaging
Tape and reel
1/18
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