STH170N8F7-2 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STH170N8F7-2
N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7
Power MOSFET in a H²PAK-2 package
Datasheet — production data
TAB
2
3
1
H²PAK-2
Features
Order code V_DS R_DS(on) max. I_D P_TOT
STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
+3$.
Order code
STH170N8F7-2
Table 1. Device summary
Marking
Package
170N8F7
H²PAK-2
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID026382 Rev 2
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