STH160N4LF6-2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Logic level drive

STH160N4LF6-2
N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI
DeepGATE™ Power MOSFET in a H²PAK-2 package
Datasheet - production data
TAB
2
3
1
H²PAK-2
Features
Order code V_DS R_DS(on) max I_D P_TOT
STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• Logic level drive
• High avalanche ruggedness
• 100% avalanche tested
Figure 1. Internal schematic diagram
Applications
• Switching applications
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Description
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This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STH160N4LF6-2
Table 1. Device summary
Marking
Package
160N4LF6
2
H PAK-2
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID026265 Rev 1
1/17
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