STH150N10F7-2 Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STH150N10F7-2
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7
Power MOSFET in a H²PAK-2 package
Datasheet − production data
TAB
2
3
1
H²PAK-2
Features
Order code
V_DS R_DS(on)max I_D P_TOT
STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
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Order code
STH150N10F7-2
September 2016
Table 1. Device summary
Marking
Package
150N10F7
H²PAK-2
DocID025859 Rev 3
Packaging
Tape and reel
1/16
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