STH145N8F7-2AG Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STH145N8F7-2AG
Automotive-grade N-channel 80 V, 3.3 mΩ typ., 90 A
STripFET™ F7 Power MOSFET in a H²PAK-2 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STH145N8F7-2AG
VDS
80 V
RDS(on) max.
4 mΩ
ID
90 A
PTOT
200 W
 Designed for automotive applications and
AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STH145N8F7-2AG
Table 1: Device summary
Marking
Package
145N8F7
H²PAK-2
Packaging
Tape and reel
June 2015
DocID027933 Rev 1
This is information on a product in full production.
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