STH140N6F7-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – High avalanche ruggedness

STH140N6F7-2, STH140N6F7-6
N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STH140N6F7-2
STH140N6F7-6
VDS
60 V
RDS(on) max.
0.0032 Ω
ID
80 A
PTOT
158 W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STH140N6F7-2
STH140N6F7-6
Table 1: Device summary
Marking
Package
140N6F7
H²PAK-2
140N6F7
H²PAK-6
Packing
Tape and Reel
Tape and Reel
July 2015
DocID025089 Rev 3
This is information on a product in full production.
1/19
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