STH110N10F7-2 Datasheet, PDF (1/19 Pages) STMicroelectronics – High avalanche ruggedness

STH110N10F7-2,
STH110N10F7-6
N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
TAB
TAB
2
3
1
H2PAK-2
7
1
H2PAK-6
Figure 1: Internal schematic diagram
S(2,3,4,5,6,7)
Features
Order code
STH110N10F7-2
STH110N10F7-6
VDS
100 V
RDS(on)
max.
6.5 mΩ
ID
PTOT
110 A 150 W
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking Package Packing
STH110N10F7-2
STH110N10F7-6
110N10F7
H²PAK-2
H²PAK-6
Tape
and reel
November 2014
DocID024027 Rev 4
This is information on a product in full production.
1/19
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