STGY80H65DFB Datasheet, PDF (1/22 Pages) STMicroelectronics – Minimized tail current

STGY80H65DFB, STGW80H65DFB,
STGWA80H65DFB STGWT80H65DFB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet - production data
3
2
1
Max247
3
2
1
TO-247
TAB



TO-247 long leads
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
G (1)
E (3)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.6 V (typ.) @ I_C = 80 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGY80H65DFB
STGW80H65DFB
STGWA80H65DFB
STGWT80H65DFB
Table 1. Device summary
Marking
Package
GY80H65DFB
Max247
GW80H65DFB
TO-247
GW80H65DFB
GWT80H65DFB
TO-247 long leads
TO-3P
Packing
Tube
Tube
Tube
Tube
May 2015
This is information on a product in full production.
DocID024366 Rev 6
1/22
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