STGWT40HP65FB Datasheet, PDF (1/17 Pages) STMicroelectronics – Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

STGWT40HP65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
TO-3P
3
2
1
Figure 1: Internal schematic diagram
Features
 Maximum junction temperature: TJ = 175 °C
 Minimized tail current
 VCE(sat) = 1.6 V (typ.) @ IC = 40 A
 Tight parameter distribution
 Co-packed diode for protection
 Safe paralleling
 Low thermal resistance
Applications
 Power factor corrector (PFC)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGWT40HP65FB
Table 1: Device summary
Marking
GWT40HP65FB
Package
TO-3P
Packing
Tube
July 2016
DocID028465 Rev 3
This is information on a product in full production.
1/17
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