STGWA80H65DFB Datasheet, PDF (1/17 Pages) STMicroelectronics – Tight parameter distribution

STGWA80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 VCE(sat) = 1.6 V(typ) @ IC = 80 A
 Safe paralleling
 Tight parameter distribution
 Low thermal resistance
 Very fast soft recovery antiparallel diode
Applications
 Photovoltaic inverters
 High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGWA80H65DFB
Table 1: Device summary
Marking
Package
GWA80H65DFB
TO-247 long leads
Packing
Tube
November 2016
DocID030057 Rev 1
This is information on a product in full production.
1/17
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