STGWA50M65DF2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 50 A low loss

STGWA50M65DF2
Trench gate field-stop IGBT, M series 650 V, 50 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 6 µs of minimum short-circuit withstand time
 VCE(sat) = 1.65 V (typ.) @ IC = 50 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGWA50M65DF2
Table 1: Device summary
Marking
Package
G50M65DF2
TO-247 long leads
Packing
Tube
June 2016
DocID028694 Rev 2
This is information on a product in full production.
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