STGWA40H65DFB Datasheet, PDF (1/17 Pages) STMicroelectronics – High speed switching series

STGWA40H65DFB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
 Tight parameter distribution
 Safe paralleling
 Low thermal resistance
 Very fast soft recovery antiparallel diode
Applications
 Photovoltaic inverters
 High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGWA40H65DFB
Table 1: Device summary
Marking
Package
G40H65DFB
TO-247 long leads
Packing
Tube
June 2016
DocID029398 Rev 1
This is information on a product in full production.
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