STGW80H65FB Datasheet, PDF (1/18 Pages) STMicroelectronics – Low thermal resistance

STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet - production data
Features
TAB
3
2
1
TO-247
TO-247 long leads
3
2
1
TO-3P
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.6 V (typ.) @ I_C = 80 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
Applications
Figure 1. Internal schematic diagram
C (2 or TAB)
• Photovoltaic inverters
• High frequency converters
Description
G (1)
E (3)
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGW80H65FB
STGWA80H65FB
STGWT80H65FB
Table 1. Device summary
Marking
Package
GW80H65FB
TO-247
GWA80H65FB
GWT80H65FB
TO-247 long leads
TO-3P
Packaging
Tube
Tube
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June 2014
This is information on a product in full production.
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