STGW80H65FB-4 Datasheet, PDF (1/14 Pages) STMicroelectronics – Safe paralleling

STGW80H65FB-4
Trench gate field-stop IGBT, HB series 650 V, 80 A
high speed in TO247-4 package
Datasheet - production data
Features
 VCE(sat) = 1.6 V (typ.) @ IC = 80 A
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 Safe paralleling
 Tight parameter distribution
 Low thermal resistance
 Kelvin pin
Figure 1: Internal schematic diagram
C(1)
G(4)
K(3)
E(2)
Applications
 Photovoltaic inverter
 High frequency converter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGW80H65FB-4
NG4K3E2C1_no_d
Table 1: Device summary
Marking
Package
G80H65FB
TO247-4
Packaging
Tube
April 2017
DocID029224 Rev 3
This is information on a product in full production.
1/14
www.st.com