STGW80H65DFB Datasheet, PDF (1/18 Pages) STMicroelectronics – High speed switching series

STGW80H65DFB,
STGWT80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datasheet - production data
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1: Internal schematic diagram
Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 VCE(sat) = 1.6 V(typ) @ IC = 80 A
 Safe paralleling
 Tight parameter distribution
 Low thermal resistance
 Very fast soft recovery antiparallel diode
Applications
 Photovoltaic inverters
 High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGW80H65DFB
STGWT80H65DFB
Table 1: Device summary
Marking
GW80H65DFB
GWT80H65DFB
Package
TO-247
TO-3P
Packing
Tube
Tube
November 2016
DocID024366 Rev 8
This is information on a product in full production.
1/18
www.st.com