STGW80H65DFB-4 Datasheet, PDF (1/16 Pages) STMicroelectronics – Tight parameter distribution

STGW80H65DFB-4
Trench gate field-stop IGBT, HB series 650 V,
80 A high speed in a TO247-4 package
Datasheet - production data
Features
 VCE(sat) = 1.6 V (typ.) @ IC = 80 A
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 Tight parameter distribution
 Safe paralleling
 Low thermal resistance
 Very fast soft recovery antiparallel diode
 Kelvin pin
Figure 1: Internal schematic diagram
Applications
 Photovoltaic inverter
 High frequency converter
Order code
STGW80H65DFB-4
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Marking
Package
Packing
G80H65DFB
TO247-4
Tube
March 2017
DocID028076 Rev 3
This is information on a product in full production.
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