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STGW75M65DF2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 75 A low loss | |||
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STGW75M65DF2,
STGWA75M65DF2
Trench gate field-stop IGBT, M series 650 V, 75 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
ï· 6 µs of short-circuit withstand time
ï· VCE(sat) = 1.65 V (typ.) @ IC = 75 A
ï· Tight parameter distribution
ï· Safer paralleling
ï· Low thermal resistance
ï· Soft and very fast recovery antiparallel diode
Applications
ï· Motor control
ï· UPS
ï· PFC
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. The devices are part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW75M65DF2
STGWA75M65DF2
Table 1: Device summary
Marking
Package
G75M65DF2
TO-247
TO-247 long leads
Packing
Tube
June 2016
DocID028695 Rev 2
This is information on a product in full production.
1/17
www.st.com
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