STGW60V60F Datasheet, PDF (1/14 Pages) STMicroelectronics – Low thermal resistance

STGW60V60F
Trench gate field-stop IGBT, V series
600 V, 60 A very high speed
Datasheet - production data
3
2
1
TO-247
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T_J = 175 °C
• Tail-less switching off
• V_CE(sat) = 1.85 V (typ.) @ I_C = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGW60V60F
Table 1. Device summary
Marking
Package
GW60V60F
TO-247
Packaging
Tube
February 2014
This is information on a product in full production.
DocID024701 Rev 2
1/14
www.st.com
14