STGW60H65FB Datasheet, PDF (1/16 Pages) STMicroelectronics – Low thermal resistance

STGW60H65FB
STGWT60H65FB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet - production data
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.6 V (typ.) @ I_C = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, a slightly positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGW60H65FB
STGWT60H65FB
Table 1. Device summary
Marking
Package
GW60H65FB
TO-247
GWT60H65FB
TO-3P
Packing
Tube
Tube
April 2015
This is information on a product in full production.
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