STGW60H65DFB Datasheet, PDF (1/19 Pages) STMicroelectronics – Low thermal resistance

STGW60H65DFB, STGWA60H65DFB
STGWT60H65DFB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet - production data
TAB
3
2
1
TO-247
3
2
1
TO-3P



TO-247 long leads
Figure 1. Internal schematic diagram
C (2, TAB)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.6 V (typ.) @ I_C = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
G (1)
E (3)
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGW60H65DFB
STGWA60H65DFB
STGWT60H65DFB
Table 1. Device summary
Marking
Package
GW60H65DFB
G60H65DFB
GWT60H65DFB
TO-247
TO-247 long leads
TO-3P
Packing
Tube
Tube
Tube
April 2015
This is information on a product in full production.
DocID024365 Rev 7
1/19
www.st.com
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