STGW60H65DF Datasheet, PDF (1/13 Pages) STMicroelectronics – 60 A, 650 V field stop trench gate IGBT with very fast diode

STGW60H65DF
60 A, 650 V field stop trench gate IGBT with very fast diode
Features
■ High speed switching
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 µs short-circuit withstand time
■ Very fast soft recovery antiparallel diode
■ Lead free package
Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Datasheet − production data
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TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW60H65DF
GW60H65DF
Package
TO-247
January 2013
This is information on a product in full production.
Doc ID 023011 Rev 4
Packaging
Tube
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www.st.com
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