STGW60H60DLFB Datasheet, PDF (1/17 Pages) STMicroelectronics – Low thermal resistance

STGW60H60DLFB
STGWT60H60DLFB
Trench gate field-stop IGBT, HB series
600 V, 60 A high speed
Datasheet - production data
TAB
3
2
1
TO-247
TO-3P
3
2
1
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.6 V (typ.) @ I_C = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low V_F soft recovery co-packaged diode
• Lead free package
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
• Induction heating
• Microwave oven
• Resonant converters
G (1)
E (3)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new "HB"
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGW60H60DLFB
STGWT60H60DLFB
Table 1. Device summary
Marking
Package
GW60H60DLFB
TO-247
GWT60H60DLFB
TO-3P
Packaging
Tube
Tube
February 2014
This is information on a product in full production.
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