STGW50NB60M Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT

STGW50NB60M
N-CHANNEL 50A - 600V - TO-247
PowerMESH™ IGBT
TYPE
V_CES
V_{CE(sat)(25°C)}
I_C
STGW50NB60M 600 V
< 1.9 V
50 A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (V_CESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH^™ IGBTs, with outstanding performances.
The suffix "M" identifies a family optimized to
achieve very low saturation on voltage for frequency
applications <10 KHz.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s MOTOR CONTROL
s WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
Collector-Emitter Voltage (V_GS = 0)
V_ECR
Reverse Battery Protection
V_GE
Gate-Emitter Voltage
I_C
Collector Current (continuous) at T_C = 25°C
I_C
Collector Current (continuous) at T_C = 100°C
I_CM ( ) Collector Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
May 2003
Value
Unit
600
V
20
V
±20
V
100
A
50
A
400
A
250
2
–65 to 150
W
W/°C
°C
150
°C
(q ) Pulse width limited by safe operating area
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