STGW50NB60H Datasheet, PDF (1/5 Pages) STMicroelectronics – N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT

®
STGW50NB60H
N-CHANNEL 50A - 600V TO-247
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
I_C
STGW50NB60H 600 V < 2.8 V 50 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
PRELIMINARY DATA
3
2
1
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES Collector-Emitter Voltage (V_GS = 0)
V_ECR Emitter-Collector Voltage
V_GE Gate-Emitter Voltage
I_C
Collector Current (continuous) at T_c = 25 ^oC
IC
Collector Current (continuous) at Tc = 100 ^oC
I_CM(•)
P_tot
Collector Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Value
600
20
± 20
100
50
400
250
2
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
1/5