STGW50H60DF Datasheet, PDF (1/12 Pages) STMicroelectronics – 50 A, 600 V field stop trench gate IGBT with Ultrafast diode

STGW50H60DF
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
Features
■ High speed switching
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 µs short-circuit withstand time
■ Ultrafast soft recovery antiparallel diode
■ Lead free package
Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters
Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive V_CE(sat) temperature coefficient
and a very tight parameter distribution result in an
easier paralleling operation.
Datasheet − production data
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TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW50H60DF
GW50H60DF
Package
TO-247
July 2012
This is information on a product in full production.
Doc ID 018673 Rev 5
Packaging
Tube
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www.st.com
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