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STGW40V60DLF Datasheet, PDF (1/17 Pages) STMicroelectronics – Designed for soft commutation only
STGW40V60DLF,
STGWT40V60DLF
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet - production data
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2 or TAB)
Features
• Designed for soft commutation only
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.8 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low VF soft recovery co-packaged diode
Applications
• Induction heating
• Microwave oven
• Resonant converters
Description
G (1)
E (3)
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGW40V60DLF
STGWT40V60DLF
Table 1. Device summary
Marking
Package
GW40V60DLF
GWT40V60DLF
TO-247
TO-3P
Packaging
Tube
Tube
October 2013
This is information on a product in full production.
DocID024212 Rev 4
1/17
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