STGW40V60DF Datasheet, PDF (1/17 Pages) STMicroelectronics – Trench gate field-stop IGBT, V series

STGW40V60DF
STGWT40V60DF
Trench gate field-stop IGBT, V series
600 V, 40 A very high speed
Datasheet - production data
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
• Maximum junction temperature: T_J = 175 °C
• Tail-less switching off
• V_CE(sat) = 1.8 V (typ.) @ I_C = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
G (1)
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
E (3)
maximize the efficiency of very high frequency
converters. Furthermore, a positive V_CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
STGW40V60DF
STGWT40V60DF
Table 1. Device summary
Marking
Package
GW40V60DF
GWT40V60DF
TO-247
TO-3P
Packaging
Tube
Tube
October 2013
This is information on a product in full production.
DocID024402 Rev 5
1/17
www.st.com
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