STGW40S120DF3 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low thermal resistance

STGW40S120DF3,
STGWA40S120DF3
Trench gate field-stop IGBT, S series
1200 V, 40 A low drop
Datasheet - production data



72
72ORQJOHDGV
Figure 1. Internal schematic diagram
&RU7$%
Features
• 10 µs of short-circuit withstand time
• V_CE(sat) = 1.65 V (typ.) @ I_C = 40 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
*
(
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive V_CE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
Order code
STGW40S120DF3
STGWA40S120DF3
Table 1. Device summary
Marking
Package
G40S120DF3
TO-247
G40S120DF3
TO-247 long leads
Packing
Tube
Tube
December 2014
This is information on a product in full production.
DocID026373 Rev 2
1/18
www.st.com