STGW40M120DF3 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low thermal resistance

STGW40M120DF3
STGWA40M120DF3
Trench gate field-stop IGBT, M series
1200 V, 40 A low loss
Datasheet - production data
Features



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Figure 1.Internal schematic diagram
• 10 µs of short-circuit withstand time
• V_CE(sat) = 1.85 V (typ.) @ I_C = 40 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
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Description
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This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
V_CE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW40M120DF3
STGWA40M120DF3
Table 1. Device summary
Marking
Package
G40M120DF3
TO-247
G40M120DF3
TO-247 long leads
Packaging
Tube
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November 2014
This is information on a product in full production.
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