STGW40H60DLFB Datasheet, PDF (1/17 Pages) STMicroelectronics – High speed switching series

STGW40H60DLFB,
STGWT40H60DLFB
Trench gate field-stop IGBT, HB series
600 V, 40 A high speed
Datasheet - production data
TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2 or TAB)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: V_CE(sat) = 1.6 V (typ.)
@ I_C = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low V_F soft recovery co-packaged diode
• Lead free package
Applications
• Induction heating
• Microwave oven
• Resonant converters
G (1)
E (3)
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGW40H60DLFB
STGWT40H60DLFB
Table 1. Device summary
Marking
Package
GW40H60DLFB
GWT40H60DLFB
TO-247
TO-3P
Packaging
Tube
Tube
March 2014
This is information on a product in full production.
DocID024370 Rev 4
1/17
www.st.com
17