STGW30M65DF2 Datasheet, PDF (1/19 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 30 A low loss

STGW30M65DF2,
STGWA30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
 6 µs of minimum short-circuit withstand time
 V_CE(sat) = 1.55 V (typ.) @ I_C = 50 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description plur
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the M series
of IGBTs, which represent an optimum
compromise in performance to maximize the
efficiency of inverter systems where low-loss and
short-circuit capability are essential. Furthermore,
a positive V_CE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW30M65DF2
STGWA30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-247
G30M65DF2
TO-247 long leads
Packaging
Tube
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December 2015
DocID027768 Rev 3
This is information on a product in full production.
1/19
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