STGW30H60DFB Datasheet, PDF (1/20 Pages) STMicroelectronics – Low thermal resistance

STGW30H60DFB, STGWA30H60DFB,
STGWT30H60DFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet - production data
3
2
1
TO-247



TO-247 long leads
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
G (1)
structure. These devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
E (3)
operation.
Order code
STGW30H60DFB
STGWA30H60DFB
STGWT30H60DFB
Table 1. Device summary
Marking
Package
GW30H60DFB
TO-247
GWA30H60DFB
GWT30H60DFB
TO-247 long leads
TO-3P
Packaging
Tube
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November 2016
This is information on a product in full production.
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