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STGW25M120DF3 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low thermal resistance | |||
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STGW25M120DF3
STGWA25M120DF3
Trench gate field-stop IGBT, M series
1200 V, 25 A low loss
Datasheet - production data
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Figure 1.Internal schematic diagram
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Features
⢠10 µs of short-circuit withstand time
⢠VCE(sat) = 1.85 V (typ.) @ IC = 25 A
⢠Tight parameters distribution
⢠Safer paralleling
⢠Low thermal resistance
⢠Soft and fast recovery antiparallel diode
Applications
⢠Industrial drives
⢠UPS
⢠Solar
⢠Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW25M120DF3
STGWA25M120DF3
Table 1. Device summary
Marking
Package
G25M120DF3
TO-247
G25M120DF3
TO-247 long leads
Packaging
Tube
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October 2014
This is information on a product in full production.
DocID026223 Rev 2
1/18
www.st.com
18
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