STGW25H120F2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Low thermal resistance

STGW25H120F2,
STGWA25H120F2
Trench gate field-stop IGBT, H series
1200 V, 25 A high speed
Datasheet - production data
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Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 2.1 V (typ.) @ I_C = 25 A
• 5 µs minimum short circuit withstand time at
T_J=150 °C
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Figure 1. Internal schematic diagram
C (2)
G (1)
SC12850
E (3)
Applications
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
• Power factor correction
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Moreover, a
slightly positive V_CE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Order code
STGW25H120F2
STGWA25H120F2
Table 1. Device summary
Marking
Package
G25H120F2
TO-247
G25H120F2
TO-247 long leads
Packaging
Tube
Tube
March 2015
This is information on a product in full production.
DocID026003 Rev 4
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