STGW20IH125DF Datasheet, PDF (1/17 Pages) STMicroelectronics – Safe paralleling

TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
STGW20IH125DF
STGWT20IH125DF
1250 V, 20 A IH series
trench gate field-stop IGBT
Datasheet - production data
Features
• Designed for soft commutation only
• Maximum junction temperature: T_J = 175 °C
• Minimized tail current
• V_CE(sat) = 2.0 V (typ.) @ I_C = 15 A
• Tight parameters distribution
• Safe paralleling
• Very low V_F soft recovery co-packaged diode
• Low thermal resistance
• Lead free package
Applications
• Induction heating
• Microwave oven
• Resonant converters
Description
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
Order code
STGW20IH125DF
STGWT20IH125DF
Table 1. Device summary
Marking
Package
G20IH125DF
G20IH125DF
TO-247
TO-3P
Packaging
Tube
Tube
February 2014
This is information on a product in full production.
DocID025269 Rev 2
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