STGW20H60DF Datasheet, PDF (1/17 Pages) STMicroelectronics – Low thermal resistance

TAB
3
2
1
TO-247
TO-3P
3
2
1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
STGW20H60DF,
STGWT20H60DF
600 V, 20 A high speed
trench gate field-stop IGBT
Datasheet - production data
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
Applications
• Motor control
• UPS, PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGW20H60DF
STGWT20H60DF
Table 1. Device summary
Marking
Packages
GW20H60DF
GWT20H60DF
TO-247
TO-3P
Packaging
Tube
Tube
June 2013
This is information on a product in full production.
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