STGW15S120DF3 Datasheet, PDF (1/18 Pages) STMicroelectronics – Low thermal resistance

STGW15S120DF3,
STGWA15S120DF3
Trench gate field-stop IGBT, S series
1200 V, 15 A low drop
Datasheet - production data



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Figure 1. Internal schematic diagram
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Features
• 10 µs of short-circuit withstand time
• V_CE(sat) = 1.55 V (typ.) @ I_C = 15 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
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Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive V_CE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
Order code
STGW15S120DF3
STGWA15S120DF3
Table 1. Device summary
Marking
Package
G15S120DF3
TO-247
G15S120DF3
TO-247 long leads
Packing
Tube
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December 2014
This is information on a product in full production.
DocID026371 Rev 2
1/18
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