STGW15H120DF2 Datasheet, PDF (1/18 Pages) STMicroelectronics – Very fast recovery antiparallel diode

STGW15H120DF2,
STGWA15H120DF2
Trench gate field-stop IGBT, H series
1200 V, 15 A high speed
Datasheet - production data
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Features
• Maximum junction temperature: T_J = 175 °C
• High speed switching series
• Minimized tail current
• V_CE(sat) = 2.1 V (typ.) @ I_C = 15 A
• 5 µs minimum short circuit withstand time at
T_J=150 °C
• Safe paralleling
• Very fast recovery antiparallel diode
• Low thermal resistance
Figure 1. Internal schematic diagram
Applications
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
• Power factor correction
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the improved
H series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
frequency converters. Furthermore, a slightly
positive V_CE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Order code
STGW15H120DF2
STGWA15H120DF2
Table 1. Device summary
Marking
Package
G15H120DF2
TO-247
G15H120DF2
TO-247 long leads
Packaging
Tube
Tube
March 2015
This is information on a product in full production.
DocID023751 Rev 5
1/18
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