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STGW10M65DF2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 10 A low loss | |||
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STGW10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
ï· 6 µs of short-circuit withstand time
ï· VCE(sat) = 1.55 V (typ.) @ IC = 10 A
ï· Tight parameter distribution
ï· Safer paralleling
ï· Low thermal resistance
ï· Soft and very fast recovery antiparallel diode
Applications
ï· Motor control
ï· UPS
ï· PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGW10M65DF2
Table 1: Device summary
Marking
G10M65DF2
Package
TO-247
Packing
Tube
March 2016
DocID029083 Rev 1
This is information on a product in full production.
1/16
www.st.com
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