STGP3NB60S Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT

STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGP3NB60S
STGD3NB60S
600 V < 1.5 V
3A
600 V < 1.5 V
3A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (V_cesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (SMD VERSION)
3
2
1
TO-220
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH^™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s MOTOR CONTROL
s LIGHT DIMMER
s STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CES
V_ECR
V_GE
I_C
I_C
I_CM ( )
P_TOT
T_stg
T_j
Collector-Emitter Voltage (V_GS = 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T_C = 25°C
Collector Current (continuous) at T_C = 100°C
Collector Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
August 2002
Value
STGP3NB60S
STGD3NB60S
600
20
±20
6
3
24
65
45
0.32
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
(q ) Pulse width limited by safe operating area
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