STGP3NB60HD Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT

STGP3NB60HD
®
STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP
PowerMESH™ IGBT
TYPE
V_CES
V_CE(sat)
I_C
STGP3NB60HD
600 V < 2.8 V 3 A
STGP3NB60HDFP 600 V < 2.8 V 3 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar am e t er
V_CES Collector-Emitter Voltage (VGS = 0)
V_GE Gate-Emitter Voltage
I_C
Collector Current (continuous) at Tc = 25 ^oC
I_C
Collector Current (continuous) at Tc = 100 ^oC
ICM(•) Collector Current (pulsed)
P_tot Total Dissipation at Tc = 25 ^oC
Derating Factor
T_{s tg} Storage T emperature
T_j
Max. O perating Junct ion T emperature
(•) Pulse width limited by max. junction temperature
Va lue
STG P7NB60HD STGP7NB60HDF P
600
600
± 20
± 20
6
6
3
3
24
24
70
35
0.56
0.28
-65 to 150
150
Unit
V
V
A
A
A
W
W /^o C
o_C
o_C
June 1999
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