STGP30M65DF2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low thermal resistance

STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a TO-220 package
Datasheet - production data
TAB
TO-220
1 ²³
Figure 1: Internal schematic diagram
Features
 6 µs of minimum short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 30 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode
Applications
 Motor control
 UPS
 PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-220
Packaging
Tube
April 2017
DocID027355 Rev 3
This is information on a product in full production.
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