STGP30H65F Datasheet, PDF (1/13 Pages) STMicroelectronics – Low thermal resistance

STGP30H65F
Trench gate field-stop IGBT, H series
650 V, 30 A high speed
Datasheet - production data
TAB
3
2
1
TO-220
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
Applications
• Inverter
• UPS
• PFC
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V_CE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGP30H65F
Table 1. Device summary
Marking
Package
GP30H65F
TO-220
Packaging
Tube
December 2013
This is information on a product in full production.
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