STGP20NB37LZ Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT

®
STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
V _CES
V_{CE(s at)}
I_C
STGP20NB37LZ CLAMPED < 2.0 V 20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
PRELIMINARY DATA
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
3
2
1
TO-220
APPLICATIONS
s AUTOMOTIVE IGNITION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_CES Collect or-Emitter Voltage (V_GS = 0)
V_ECR
V_GE
I_C
I_C
I_CM(•)
E _AS
P_tot
Reverse Battery Protection
Gate-Emitter Voltage
Collect or Current (continuous) at T_c = 25 ^oC
Collect or Current (continuous) at T_c = 100 ^oC
Collector Current (pulsed)
Single Pulse Energy Tc = 25 ^oC
Total Dissipation at T_c = 25 ^oC
Derating Factor
E_SD ESD (Human Body Model)
Tstg Storage Temperature
T_j Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
April 2000
Value
CLA M PE D
20
CLA M PE D
40
30
80
700
150
1
4
-65 to 175
175
Un it
V
V
V
A
A
A
mJ
W
W /^o C
KV
o_C
o_C
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